Parameters from the fitting results reveal the existence of a tiny capacitance and a big resistance, which is in consonance with the conductive filament (CF) theory that when the RRAM is in LRS, it is mainly a resistance formed

by the CF [10]. On the other hand, the calculated parameters for the HRS are shown in the inset of Figure 7b, and the FHPI ic50 device exhibits two different semicircles which indicate the complex equivalent circuit model that contains two RC parallel sections in series. In the LRS of the device, conducting filaments are formed in the device, and as a result, the device can be considered as a resistor with small resistance and a capacitor (the area without formed filaments) with small capacitance. On the other hand, when the device is in HRS, conducting filaments are ruptured Mocetinostat at a certain position in the oxide. The ruptured place will induce an additional tunneling resistor with big resistance and a capacitor with big capacitance. Figure 7 The Nyquist plots. (a) LRS and (b) HRS from impedance measurements. Their fittings to

AZD5363 the equivalent circuits (solid line) and the circuit models as well as their parameters were also presented. Conclusions In conclusion, a highly reliable and uniform flexible RRAM based on the TiN/HfO2/Al2O3/ITO structure, fabricated by a low-temperature process, was investigated. The fresh cell shows an ultra-low resistance state, and after the initial reset operation, a typical bipolar reliable and reproducible resistive switching behavior was demonstrated. It is found

that the memory window is still in accordance with excellent thermal stability after a 104-s retention time, and a 10-year usage is still possible with the resistance ratio larger than 10 at room temperature and at 85°C. The resistance of the LRS and HRS exhibits a very concentrated distribution with almost 90% of the LRS around 0.6 kΩ and 80% of the HRS around 10 kΩ. The developed low-temperature process for the memories may promote the potential applications of oxide-based RRAM in flexible ICs. Authors’ information RCF received Sclareol his B.S. degree in Physics and Electronics from Nanjing Information Engineering University, Nanjing, China in 2010. He is currently studying at the School of Microelectronics, Fudan University for his Master’s degree. His research interests include flexible memory and device design. QQS received his B.S. degree in Physics, his M.S. and Ph.D. degrees in Microelectronics and Solid state Electronics from Fudan University, Shanghai, China in 2004 and 2009, respectively. He is currently an associate professor at the School of Microelectronics in Fudan University. His research interests include fabrication and characterization of advanced metal oxide semiconductor field effect transistors, mainly high-k dielectric-based devices.