2 to 1.6 μm of the as-grown and etched SiGe/Si MQW samples fabricated using a resized nanosphere template. Conclusions In conclusion, this study demonstrates the fabrication of optically active uniform SiGe/Si MQW nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using NSL combined with reactive RIE. Compared to the as-grown sample, we observe an apparent blueshift in PL spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the GM6001 upper MQD-like

SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is proposed for the PL enhancement. Moreover, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range from the ultraviolet selleck kinase inhibitor to infrared. This work offers a low cost and feasible alternative for designing and fabricating SiGe/Si nanostructured arrays as a potential material of multifunctionality. Authors’ information H-TC is currently a Ph.D. candidate of National Central University (Taiwan). B-LW is a Master’s degree student of National Central University (Taiwan). S-LC and TL are professors of the Department of Chemical and Materials Engineering at National Central University (Taiwan). S-WL is an associate professor of the Institute of Materials Science and Engineering at National Central University (Taiwan).

Acknowledgements The research is supported by the National Science Council of BAY 11-7082 Taiwan under contract no. NSC-100-2221-E-008-016-MY3. The authors also thank the Center for Nano Science and Technology at National Central University. References 1. Xia JS, Ikegami Y, Shiraki Y, Usami N, Nakata Y: Strong

resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature. Appl Phys Lett 2006, 89:201102.CrossRef Sclareol 2. Jovanović V, Biasotto C, Nanver LK, Moers J, Grützmacher D, Gerharz J, Mussler G, van der Cingel J, Zhang JJ, Bauer G, Schmidt OG, Miglio L: n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility. IEEE Electron Device Lett 2010, 31:1083–1085.CrossRef 3. Hsieh HY, Huang SH, Liao KF, Su SK, Lai CH, Chen LJ: High-density ordered triangular Si nanopillars with sharp tips and varied slopes: one-step fabrication and excellent field emission properties. Nanotechnology 2007, 18:505305.CrossRef 4. Lan MY, Liu CP, Huang HH, Chang JK, Lee SW: Diameter-sensitive biocompatibility of anodic TiO 2 nanotubes treated with supercritical CO 2 fluid. Nanoscale Res Lett 2013, 8:150.CrossRef 5. Qian X, Li J, Wasserman D, Goodhue WD: Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography. Appl Phys Lett 2008, 93:231907.CrossRef 6. Hadobás K, Kirsch S, Carl A, Acet M, Wassermann EF: Reflection properties of nanostructure-arrayed silicon surfaces. Nanotechnology 2000, 11:161–164.CrossRef 7.