Because the cluster A-769662 datasheet ion current can be influenced from cluster size and extractor bias strongly, selecting small carbon cluster ions to carry out implantation is out of more time consumptions. However, more defects can be produced by cluster C1 implantation instead of saving time. For example, implantation time is about 8.5 h for cluster C8 at 20 keV in this work, but the I G/I 2D ratio is the smallest which indicates that the graphene quality is better than that in the other smaller cluster sizes. Simply, E 0 is cluster energy, and every atom of Cn cluster

can be allocated as homogeneous energy of E 0/n. Therefore, in comparison with C1, C n (n > 1) has more sophisticated interactions with the substrate, involving in non-linear damage effect and atomic self-sputtering effect [24, 25]. During such low-energy shallow ion implantation, carbon atom contents in Ni film may

reach up to saturation at certain implantation dosage, which is significant for cluster aggregation to interact with the substrate. Graphene nucleation on the transition metal has been investigated RepSox cell line to a theoretical growth issue that strongly depends on segregation and precipitation on the grain boundaries of the substrate after thermal treatment [26], no matter how to prepare graphene, by chemical vapor deposition (CVD) or ion implantation [14, 15, 20, 21]. Baraton et al. have proposed that the anneal temperature

from 900°C to 725°C, half of the carbon atoms were removed to grain boundaries of Ni surface to form graphene; that is to say, 4 × 1015 cm−2 and 8 × 1015 cm−2 of carbon concentration on the surface are in Alpelisib manufacturer agreement with monolayer and bilayer graphene [15], respectively. However, it is not successful to control the number of graphene layers accurately by regulating the contents of implantation carbon atoms. ADAM7 We always seek to graphene synthesis with fewer defects by low-energy cluster ion technique; larger cluster size C n (n > 10) under suitable energy is more likely to develop this process. But we have to take the atomic self-sputtering effect and more sophisticated cluster-matter interaction into consideration. More investigations are probable to promote the nucleation mechanism of graphene including ion-matter interaction, crystal quality of the substrate, anneal temperature, and other details about growth conditions. Conclusions We have developed a low-energy cluster chamber on the base of extensive application for the double 1.7 MV Tandetron accelerator, which was used to explore for graphene synthesis. In our previous work, a kind of amorphous ultra-thin carbon film was fabricated by projecting C4 cluster ions to the silicon at 14 keV, and the RMS is about 5.10 nm. Another substrates Ni/SiO2/Si whose thickness was measured at 227.