Concomitant to the change of the pore diameter, the length of the side pores is modified between 20 and 50 nm. With decreasing pore

diameter, the length of the side pores is increased. Nevertheless, in all investigated samples, the pores are clearly separated from each other. Figure  2 shows a porous https://www.selleckchem.com/products/prt062607-p505-15-hcl.html silicon sample with an average pore diameter of selleck inhibitor 90 nm filled with Ni-wires. It can be seen that the deposited Ni matches the morphology of the pores. Figure 2 Backscattered electron (BSE) image showing deposited Ni-wires matching the morphology of the porous silicon structure. In general, magnetic interactions between neighboring metal wires influence strongly the coercive fields and the remanence. Dipolar coupling between nanowires can reduce the coercivity of nanowire array significantly [6]. Also, the behavior of the magnetic moments within the wires is affected by the stray fields of the wires which perturb the magnetization reversal process of the wires [7]. A decrease of the coercivity of a Ni-nanowire array has been observed by investigating samples with different porous morphologies. This decrease can be assigned to increasing magnetic interactions between neighboring wires caused by increasing side-pore length. Magnetic field-dependent measurements on the porous silicon/Ni composites

which have been prepared by conventional etching show a decrease of the coercivity with decreasing pore diameter which can be varied between H C = 450 Oe to H C = 100 Oe, whereas the coercivity of the specimen prepared by find more magnetic field-assisted

anodization offers a coercivity of H C = 650 Oe which is much higher. Also, the magnetic remanence M R decreases with increasing dendritic structure of the deposited Ni-wires. Magnetic field-assisted etched samples offer a remanence at least twice the value as in the case of conventional etched samples which results in a difference of the squareness (M R/M S) between 85 and 42%. In Figure  3, magnetic field-dependent measurements are presented showing the decrease of the coercivity with increasing roughness of the deposited Ni-wires. These results indicate Verteporfin chemical structure that the magnetic coupling between neighboring Ni-wires decreases with decreasing dendritic pore growth because the effective distance between the pores is increased due to shorter side pores and also due to less contribution of the dendrites to the stray fields. Figure  4 shows the dependence of the coercivity on the side-pore length. In the case of conventional etched porous silicon with decreasing side-pore length from about 50 nm (pore diameter approximately 40 nm) to about 30 nm (pore diameter approximately 80 nm) and further to about 20 nm (pore diameter approximately 90 nm), an increase in the coercivity has been observed from H C = 270 Oe to H C = 320 Oe and to H C = 355 Oe.