cruzi vertical transmission is not feasible, although early diagnosis allows appropriate treatment of newborns with a 100% efficacy. The present document will recall the importance of T. cruzi mother-to-child transmission and maternal-foetal consequences in non-endemic areas.

It is highly recommended that infected pregnant women

in MK5108 manufacturer non-endemic regions be accurately assessed.”
“dThe possibility of sorption of technetium-99 in the form of pertechnetate anion (TcO(4)(-)) and the sorption kinetics for removing TcO(4)(-) from aqueous solution by chelating polymers based on glycidyl methacrylate (GMA) were investigated. Two samples of macroporous crosslinked poly(glycidyl methacrylate-co-ethylene glycol dimethacrylate) (PGME), with different amount of the crosslinker (ethylene glycol dimethacrylate, EGDMA), were synthesized by suspension copolymerization and functionalized with diethylene triamine (deta). We propose that nonspecific sorption of pertechnetate anion via electrostatic interactions takes place at the protonated amino groups of macroporous crosslinked copolymer. The results selleck compound of batch experiments per-formed at pH 1-14 showed fast sorption kinetics

for removing TcO(4)(-) by amino-functionalized PGME-deta in a wide range of pH, that is, from 1.0 to 9.0. Almost complete removal of TcO(4)(-) (91-98%) was reached within 180 min in the stated pH range (1.0-9.0), with the sorption half-times of under 25 min. The partitioning coefficients of linear adsorption isotherms, with 180-min equilibrium time, reach the high values of 2130 mL g(-1) and 1698 mL g(-1) for the two samples

of synthesized PGME-deta. (C) 2011 Wiley Periodicals, Inc. J Appl Polym Sci 123: 1273-1282, 2012″
“The optical properties of quaternary Al(x)In(y)Ga(1-x-y)N alloy films with 0: 16 < x < 0: 64 and 0: 02 < y < 0: 13 are presented. The (0001)-oriented AlInGaN layers were grown by metal-organic vapor phase epitaxy on thick GaN/sapphire templates. High-resolution x-ray diffraction measurements revealed the pseudomorphic growth of the AlInGaN films on the GaN buffer. Rutherford selleck chemical backscattering and wavelength-dispersive x-ray spectroscopy analysis were used in order to determine the composition of the alloys. The ordinary dielectric function (DF) of the AlInGaN samples was determined in the range of 1-10 eV by spectroscopic ellipsometry (SE) at room temperature (synchrotron radiation: BESSY II). The sharp onset of the imaginary part of the DF defines the direct absorption edge of the alloys. At higher photon energies, pronounced peaks are observed in the DF indicating a promising optical quality of the material. These features are correlated to the critical points of the band structure (van Hove singularities). An analytical model, which permits us to accurately describe the dielectric function (or optical constants) in the range of 1-10 eV, is also presented.