Left- and right-hand side

figures correspond to the configurations A (lateral) and B (transversal), respectively. In the literature, there are basically two possible mechanisms acting in the system for the transport of oxygen vacancies, which are responsible for the demonstration of memristive characteristics: (a) the filamentary conducting path [7–9] and (b) the interface-type conducting path [7]. The first one proposes that conductive and non-conductive zones in the oxide layers are created by the distribution of oxygen vacancies within the material due to its morphology and the applied bias voltage. The second one explains the resistive switching by the creation of conducting filaments made of oxygen vacancies across the dielectric AZD1390 material (ZnO) under an applied bias voltage. In the present

Cilengitide chemical structure study, the effect can be attributed to the fact that the use of porous silicon as a substrate increases the effective surface area (refer to Figure 2e; granular labyrinth patterns formed on the surface after annealing) and hence the oxygen vacancies in ZnO, which leads to the memristive behavior of the composite structure. Conductive channels (filamentary conducting paths) are formed within the ZnO layer and grain boundaries [7]. In both configurations, the presence of memristive behavior suggests that a suitable grain size can promote the diffusion of oxygen vacancies in any direction of the device. Conclusions In this paper, the ZnO-mesoPS nanocomposite is demonstrated as a potential structure in the Vactosertib nmr fabrication of memristive devices. Deposition of ZnO onto the mesoporous silicon substrate and post-annealing treatment resulted in the formation of regular labyrinth patterns with granular appearance. Mesoporous silicon as a substrate was found to promote the modification of ZnO grain size and consequently a significant enhancement

of oxygen vacancies, which are responsible for resistive switching. Typical memristive behavior is demonstrated and analyzed. Future work is being carried out to study the tunability of of the device as a function of substrate porosity/morphology. Authors’ information LM and OO are PhD and M. Tech students, respectively, in a material science and technology program in a research institute (CIICAp-UAEM) in Cuernavaca. YK is a postdoctoral fellow in UNAM. VA is working as a professor-scientist in CIICAp-UAEM. Acknowledgements This work was financially supported by a CONACyT project (#128953). We acknowledge the technical help provided by Jose Campos in acquiring the SEM images. References 1. Chua L: Memristor-the missing circuit element. Circuit Theory IEEE Transact On 1971,18(5):507–519.CrossRef 2. Strukov DB, Snider GS, Stewart DR, Williams RS: The missing memristor found. Nature 2008,453(7191):80–83. 10.1038/nature06932CrossRef 3. Park J, Lee S, Lee J, Yong K: A light incident angle switchable ZnO nanorod memristor: reversible switching behavior between two non‒volatile memory devices.