Wu WW, Lu KC, Wang CW, Hsieh HY, Chen SY, Chou YC, Yu SY, Chen LJ, BIX 1294 Tu KN: Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. Nano Lett 2010, 10:3984–3989.CrossRef 9. Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang
CW, Chen LJ, Tu KN: The influence of surface oxide on the growth of metal/semiconductor nanowires. Nano Lett 2011, 11:2753–2758.CrossRef 10. Hsu SC, Hsin CL, Yu SY, Huang CW, Wang CW, Lu CM, Lu KC, Wu WW: Single-crystalline Ge selleck compound nanowires and Cu3Ge/Ge nano-heterostructures. Cryst Eng Comm 2012, 14:4570–4574.CrossRef 11. Wu WW, Lu KC, Chen KN, Yeh PH, Wang CW, Lin YC, Huang Y: Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties. Appl Phys Lett 2010, 97:203110.CrossRef 12. Kim J, Lee ES, Han CS, Kang Y, Kim D, Anderson WA: Observation of Ni silicide formation and field emission properties of Ni silicide nanowires. Microelectron Eng 2008, 85:1709–1712.CrossRef 13. Kim J, Anderson WA: Spontaneous nickel monosilicide nanowire formation by metal induced growth. Thin Solid Films 2005, 483:60–65.CrossRef 14. Kim CJ, Kang K, Woo YS, Ryu KG, Moon H, Kim JM, Zang DS, Jo MH: Spontaneous chemical vapor growth of NiSi nanowires and their metallic properties. Adv Mater 2007, 19:3637–3642.CrossRef 15. Kim J, Shin DH, Lee ES, Han CS, Park CX-5461 order YC: Electrical
characteristics of single and doubly connected Ni silicide nanowire grown by Protein kinase N1 plasma-enhanced chemical vapor deposition. Appl Phys Lett 2007, 90:253103.CrossRef 16. Yan XQ, Yuan HJ, Wang JX, Liu DF, Zhou ZP, Gao Y, Song L, Liu LF, Zhou WY, Wang G, Xie SS: Synthesis and characterization of a large amount of branched Ni 2 Si nanowires. Appl Phys A 2004, 79:1853–1856.CrossRef 17. Kang K, Kim SK, Kim CJ, Jo MH: The role of NiO x overlayers on spontaneous growth of NiSi x nanowires from Ni seed layers. Nano Lett 2008, 8:431–436.CrossRef 18. Chueh YL,
Chou LJ, Cheng SL, Chen LJ, Tsai CJ, Hsu CM, Kung SC: Synthesis and characterization of metallic TaSi 2 nanowires. Appl Phys Lett 2005, 87:223113.CrossRef 19. Chueh YL, Ko MT, Chou LJ, Chen LJ, Wu CS, Chen CD: TaSi 2 nanowires: a potential field emitter and interconnect. Nano Lett 2006, 6:1637–1644.CrossRef 20. Xiang B, Wang QX, Wang Z, Zhang XZ, Liu LQ, Xu J, Yu DP: Synthesis and field emission properties of TiSi 2 nanowires. Appl Phys Lett 2005, 86:243103.CrossRef 21. Ouyang L, Thrall ES, Deshmukh MM, Park H: Vapor phase synthesis and characterization of ϵ-FeSi nanowires. Adv Mater 2006, 18:1437–1440.CrossRef 22. Varadwaj KSK, Seo K, In J, Mohanty P, Park J, Kim B: Phase-controlled growth of metastable Fe 5 Si 3 nanowires by a vapor transport method. J Am Chem Soc 2007, 129:8594–8599.CrossRef 23. Szczech JR, Schmitt AL, Bierman MJ, Jin S: Single-crystal semiconducting chromium disilicide nanowires synthesized via chemical vapor transport. Chem Mater 2007, 19:3238–3243.CrossRef 24.