Authors’ contributions The work presented here was performed in collaboration of all authors. CYL and TCC figured out the mechanism about this research. TYL and TK did the O2/ H2 plasma treatment on the c-ZnO NWs. CYL, SHH and YJL did the FESEM and HRTEM analysis. CYS and JTS did the KPAFM analysis. PHY organized the article. All authors read and approved the final manuscript.”
“Background Recently, spin-polarized transport has been a main topic of spintronics. Optical injection has been widely used to generate a spin current [1, 2]. In low-dimensional semiconductor structures which possess structure inversion asymmetry (SIA) or bulk inversion asymmetry (BIA), the spin-orbit
interaction (SOI) lifts the spin degeneracy in k space and leads to a linear spin splitting . A normally incident linearly polarized or unpolarized light can excite identical amount of nonequilibrium carriers with ARRY-162 molecular weight opposite spins and velocities to the
spin-splitting subbands, leading to a spin photocurrent, accompanied by no electric current. Direct detection of the spin current is difficult for the absence of net current and polarization. However, as shown in Figure 1a, the symmetric Evofosfamide in vivo distribution of electrons CFTRinh-172 in vitro can be broken by the Zeeman splitting caused by a magnetic field, then the magneto-photocurrent effect (MPE) occurs . The spin-polarized magneto-photocurrent provides an effective approach to research the spin current. Figure 1 Schematic diagram (a) of nonequilibrium electrons which occupy two spin-splitting energy bands and experimental setup diagram (b). (a) An in-plane magnetic field perpendicular to k x is applied to induce the Zeeman split energy Δ E=g ∗ μ B B. The blue dots stand for photo-excited nonequilibrium Arachidonate 15-lipoxygenase electrons. Curving arrows show the electron relaxation process. The thicker arrows mean the higher relaxation rate. (b) The magnetic field is rotated in the x-y plane. MPE has been observed in InGaAs/InAlAs two-dimensional electron gas,
GaAs/AlGaAs quantum well, graphene and so on [5–7]. By comparison, the InAs/GaSb type II supperlattice has some advantages in investigating spin transport and fabricating spintronic devices for its properties of large SOI in InAs and GaSb, relatively high carrier mobility in InAs and peculiar energy band structure [8, 9]. Previously, the InAs/GaSb type II superlattice has been extensively researched as an infrared detector. The studies have been mainly focused on carrier recombination, interface properties, tailoring of energy bands and so on [10–17]. The zero-field spin splitting has also been observed in InAs/GaSb quantum wells by Shubnikov-de-Haas oscillation , while the investigations on the magneto-photo effect is seldom concerned. In the present paper, we investigate the MPE in the InAs/GaSb type II supperlattice.